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| SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 PARTMARKING DETAILS BC807 5DZ BC807-16 5AZ BC807-25 5BZ BC807-40 5CZ COMPLEMENTARY TYPES BC808 5HZ BC808-16 5EZ BC808-25 5FZ BC808-40 5GZ BC807 BC808 BC817 BC818 BC807 BC808 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB I BM Ptot Tj:Tstg BC807 -50 -45 -5 -1 -500 -100 -200 330 -55 to +150 SOT23 BC808 -30 -25 UNIT V V V A mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL ICBO IEBO VCE(sat) VBE(on) hFE 100 40 100 160 250 fT Cobo 100 8.0 MIN. TYP. MAX. UNIT CONDITIONS. -0.1 -5 -10 -700 -1.2 600 250 400 600 MHz pF A A A Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio -16 -25 -40 Transition Frequency Collector-base Capacitance VCB=-20V, IE=0 VCB=-20V, IE=0, Tamb=150C VEB=-5V, IC=0 IC=-500mA, IB=-50mA* IC=-500mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-10mA, VCE=-5V f=35MHz IE=Ie=0, VCB=-10V f=1MHz mV V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices 3-9 |
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